使用 STM32 HAL 驱动程序将结构体硬故障写入 STM32H7 闪存

--已更新，见下文--

我正在尝试将一个大小约为 680 字节的结构写入 STM32H757XIH6 中闪存的第 1 扇区、第 2 组。我对这种事情还很陌生，所以我正在慢慢地编写代码。我正在使用 STM32 HAL 驱动程序。该扇区的地址是 0x08100000。

代码如下：

typedef struct {
    uint32_t data_header;
    Parameter parameter[NUMBER_PARAMETERS];
    int screen_paras[MAX_SCREENS][MAX_WIDGETS];
} Persistent_data;


void save_data() {
    Persistent_data save_data;

    uint32_t data_header = DATA_HEADER;

    save_data.data_header = data_header;
    memcpy(save_data.parameter, parameter, sizeof(save_data.parameter));
    memcpy(save_data.screen_paras, screen_paras, sizeof(save_data.screen_paras));

    size_t size = sizeof(Persistent_data);
    uint32_t word_count = (size + 3) / 4; //32bit alignment
    Flash_Write(FLASH_START_ADDRESS, (uint32_t*)&save_data, word_count);
    }


HAL_StatusTypeDef Flash_Write(uint32_t address, uint32_t* data, uint32_t length) {
    HAL_StatusTypeDef status = HAL_OK;

    // Ensure address is within the flash range
    if (address < FLASH_USER_START_ADDR || (address + length) > FLASH_USER_END_ADDR) {
        return HAL_ERROR;
        }

    // Unlock the Flash
    HAL_FLASH_Unlock();

    // Erase the flash sector
    FLASH_EraseInitTypeDef eraseInitStruct = {
        .TypeErase = FLASH_TYPEERASE_SECTORS,
        .Banks = FLASH_BANK_2,
        .Sector = FLASH_SECTOR_1,
        .NbSectors = 1,
        .VoltageRange = FLASH_VOLTAGE_RANGE_3,
        };
    uint32_t sectorError = 0;

    status = HAL_FLASHEx_Erase(&eraseInitStruct, &sectorError);
    if (status != HAL_OK) {
        HAL_FLASH_Lock();
        return status;
        }

    // Write the data
     for (int i = 0; i < length / 4; i++) { // Writing 32-bit words
        status = HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, address, data[i]);
        if (status != HAL_OK) {
            break;
            }
        address += 4; // Increment address by 4 bytes (32 bits)
        }

    // Lock the Flash
    HAL_FLASH_Lock();
    return status;
    }

当我尝试保存 save_data （及其所有成员）时，该行会产生硬故障status = HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, address, data[i]);

进一步追踪它，它进入了*dest_addr = *src_addr;stm32h7xx_hal_flash.c。从那里我不确定如何解释崩溃堆栈，接下来是<signal handler called>() at 0xffffffed

ffffffed:   Failed to execute MI command:
          -data-disassemble -s 4294967277 -e 4294967529 -- 3
          Error message from debugger back end:
          Cannot access memory at address 0xffffffec

如果我可以提供更多信息，请告诉我

-----更新 1：---- 我已根据建议更新了代码以适应 256 位/32 字节字。新代码片段：

typedef struct {
    uint32_t data_header;
    Parameter parameter[NUMBER_PARAMETERS];
    int screen_paras[MAX_SCREENS][MAX_WIDGETS];
} Persistent_data;

void save_data() {
    Persistent_data save_data;

    uint32_t data_header = DATA_HEADER;

    save_data.data_header = data_header;
    memcpy(save_data.parameter, parameter, sizeof(save_data.parameter));
    memcpy(save_data.screen_paras, screen_paras, sizeof(save_data.screen_paras));

    size_t size = sizeof(Persistent_data);
    uint32_t word_count = (size + 31) / 32; //32bit alignment
    Flash_Write(FLASH_START_ADDRESS, (uint32_t*)&save_data, word_count);
    }

void load_data() {

    Persistent_data load_data;
    size_t size = sizeof(Persistent_data);
    uint32_t word_count = (size + 31) / 32; //align
    Flash_Read(FLASH_START_ADDRESS, (uint32_t*)&load_data, word_count);

    if (load_data.data_header == DATA_HEADER) {
        memcpy(parameter, load_data.parameter, sizeof(parameter));
        memcpy(screen_paras, load_data.screen_paras, sizeof(screen_paras));
        }
}

HAL_StatusTypeDef Flash_Write(uint32_t address, uint32_t* data, uint32_t length) {
    HAL_StatusTypeDef status = HAL_OK;

    // Ensure address is within the flash range
    if (address < FLASH_USER_START_ADDR || (address + length) > FLASH_USER_END_ADDR) {
        return HAL_ERROR;
        }

    // Unlock the Flash
    HAL_FLASH_Unlock();

    // Erase the flash sector
    FLASH_EraseInitTypeDef eraseInitStruct = {
        .TypeErase = FLASH_TYPEERASE_SECTORS,
        .Banks = FLASH_BANK_2,
        .Sector = FLASH_SECTOR_1,
        .NbSectors = 1,
        .VoltageRange = FLASH_VOLTAGE_RANGE_3,
        };
    uint32_t sectorError = 0;

    status = HAL_FLASHEx_Erase(&eraseInitStruct, &sectorError);
    if (status != HAL_OK) {
        HAL_FLASH_Lock();
        return status;
        }


    //Write the data
     for (int i = 0; i < length / 32; i++) { // Writing 32-byte (256 bit) words
        status = HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, address, (uint32_t)&data[i * 8]);
        if (status != HAL_OK) {
            break;
            }
        address += 32; // Increment address by 32 bytes (256 bits)
        }


    // Lock the Flash
    HAL_FLASH_Lock();
    return status;
    }

/**
 * @brief Read data from flash memory
 * @param address Start address to read (must be 256-bit aligned)
 * @param data Pointer to the buffer to store the read data
 * @param length Number of bytes to read (must be a multiple of 32)
 */
void Flash_Read(uint32_t address, uint32_t* data, uint32_t length) {
    if (address < FLASH_USER_START_ADDR || (address + length) > FLASH_USER_END_ADDR) {
        return; // Out of bounds
    }

    for (uint32_t i = 0; i < length / 32; i++) { // Reading 32-byte (256-bit) words
        // Read 32 bytes (256 bits) from flash starting at the given address
        for (uint32_t j = 0; j < 8; j++) {
            data[i * 8 + j] = *(__IO uint32_t*)(address + j * 4); // 4 bytes per uint32_t word
        }
        address += 32; // Increment address by 32 bytes (256 bits)
    }
}

新问题：当我读回数据时，它不正确。data_header 不匹配。那里有数据，但都不正确。这可能与我引用/使用指针的方式有关吗？或者与内存迭代的方式有关？